ZnO
Zinc oxide (ZnO) is a good substrate for GaN thin film. It has large exciton binding energy of 60 meV and a bandwidth of 3.73 eV at room temperature, making it a luminescent material for ultraviolet and visible light. Due to the transparency in the visible region, the large electrome-chanical coupling coefficient and the properties of adsorption and desorption of gas molecules on its surface, it is expected to be used in energy limiters with high peak energy, GaN substrates with large size and high quality, and wireless communications which beyond 5GHz in the future, high electric field equipment, high temperature and high energy electronic devices etc.
使用/应用
Zinc oxide (ZnO) is a good substrate for GaN thin film.
A luminescent material for ultraviolet and visible light.
Be used in energy limiters with high peak energy,.
GaN substrates with large size and high quality.
Wireless communications which beyond 5GHz.
High electric field equipment, high temperature and high energy electronic devices etc.
特点/优势
Large exciton binding energy of 60 meV and a bandwidth of 3.73 eV at room temperature;
Transparent in visible region, and has large electrome-chanical coupling coefficient and can adsorb and desorb gas molecules on its surface.
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Crystal Structure
Hexagonal
Lattice Constant
a=3.252Å c=5.313 Å
Density
5.7（g/cm3）
Growth Method
Hydrothermal
Mhos Hardness
4（mohs）
Melting Point
1975℃
Thermal Expansion
//a 6.5 x 10-6 /K //c 3.7 x 10-6 /K
Heat Capacity
0.125 cal /gm
Thermal-Electric Constant
1200 mv/K@ 300 ℃
Thermal Conductivity
0.006 cal/cmK
Transmittance
0.4-0.6 um > 50% at 2mm
Orientation
<0001>、<11-20>、<10-10>±0.5º
Dimension
25×25×0.5mm、10×10×0.5mm、10×5×0.5mm、5×5×0.5mm
According to customer needs, substrates with special orientation and size can be customized.
Surface Roughness
Ra<5Å（5×5μm）
Atomic Particle Microscopy (AFM) test report can be provided.
Polishing
One side or two sides
Package
Class 100 clean bag, Class 1000 super clean room
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Dimension
25×25×0.5mm、10×10×0.5mm、10×5×0.5mm、5×5×0.5mm
Customized upon request.