MgAl6O10

MgAl₆O₁₀ single crystal is a new substrate material for GaN and ZnO epitaxial growth. MgAl₆O₁₀ single crystal belongs to cubic system, the space group is fd-3m (227), the cell parameter a = 7.9780 Å, and its density is 3.585g/cm3. Compared with MgAl₂O₄ crystal, MgAl₆O₁₀ single crystal has smaller thermal expansion mismatch and lattice mismatch with GaN. The thermal expansion mismatch with GaN is 2.2 × 10 − 6 K − 1, lattice mismatch is − 11.5%. In addition, MgAl₆O₁₀ single crystal is easier to grow large-size and high-quality crystals because its melting point is lower than that of MgAl₂O₄ crystal. Experiments show that the luminescence performance of GaN and ZnO devices prepared on MgAl₆O₁₀ single crystal substrate is better than that of sapphire.