GaAs
Gallium arsenide (chemical formula:) is a compound synthesized by two elements of gallium and arsenic. It is an important group IIIA and group VAcompound semiconductor material.
使用/应用
Gallium arsenide(GaAs) can be used to make microwave integrated circuits, infrared light-emitting diodes, semiconductor lasers and solar cells. GaAs is often used as the base material for the epitaxial growth of III-V semiconductors, including indium gallium arsenide, aluminum gallium arsenide, and so on.
特点/优势
▪ Very high electron mobility.
▪ GaAs cells are relatively insensitive to heat compare to silicon cells. Hence it offers high thermal stability.
▪ Lower noise.
▪ Operates over wide temperature range.
▪ High efficiency and resistance to radiation.
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Single Crystal
Doping
Conductivity Type
Carrier Concentration (cm-3)
Dislocation Density (cm-2)
Growth Method
Standard Substrate
GaAs
None
Si
/
<5×105
LEC
HB
Dia3″
Dia3″×0.5
Dia2″×0.5
Si
N
>5×1017
Cr
Si
/
Fe
N
~2×1018
Zn
P
>5×1017
Dimension
25×25×0.5mm、10×10×0.5mm、10×5×0.5mm、5×5×0.5mm
According to customer needs, substrates with special orientation and size can be customized.
Surface Roughness
Surface roughness(Ra):<=5Å
Atomic Particle Microscopy (AFM) test report can be provided.Polishing
One side or two sides
Package
Class 100 clean bag, Class 1000 super clean room
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25×25×0.5mm、10×10×0.5mm、10×5×0.5mm、5×5×0.5mm
According to customer needs, substrates with special orientation and size can be customized.